Significant impact of Al1-xGaxN interlayer on GaN/AlN thermal boundary conductance
AlN-GaN heterostructures are central to high-power and high-frequency electronics, including RF devices, power converters, and AI accelerators. An intermediate Al1-xGaxN (AlGaN) layer is often present, either unintentionally during growth or intentionally to induce a 2D electron gas, yet its impact on the interfacial thermal boundary...